发明授权
- 专利标题： Method and apparatus for etch rate uniformity control
- 专利标题（中）： 用于蚀刻速率均匀性控制的方法和装置
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申请号： US10065720申请日： 2002-11-13
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公开(公告)号： US06992014B2公开(公告)日： 2006-01-31
- 发明人: Casey J. Grant , Joel M. Sharrow , John J. Snyder
- 申请人： Casey J. Grant , Joel M. Sharrow , John J. Snyder
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Schmeiser, Olsen & Watts
- 代理商 Anthony Canale
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
A method for controlling a process on a substrate. The method comprising: providing the substrate, the substrate having an upper surface, an opposite lower surface and an edge between the upper and lower surfaces; processing the upper surface of the substrate with a first fluid; directing a second fluid against a portion of the lower surface proximate to the edge of the substrate, wherein the second fluid flows adjacent to the edge of the substrate; and controlling the temperature of the second fluid in order to affect a processing of an edge region of the upper side of the substrate.
公开/授权文献
- US20040092128A1 Method and apparatus for etch rate uniformity control 公开/授权日：2004-05-13
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