Invention Grant
- Patent Title: Integrated structure of inductances with shared values on a semiconductor substrate
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Application No.: US09918792Application Date: 2001-07-30
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Publication No.: US06993313B2Publication Date: 2006-01-31
- Inventor: Armand Castillejo , Fabienne Rerat
- Applicant: Armand Castillejo , Fabienne Rerat
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Seed IP Law Group PLLC
- Agent Lisa K. Jorgenson; Harold H. Bennett, II
- Priority: FR0010066 20000731
- Main IPC: H04B1/28
- IPC: H04B1/28 ; H04B1/18 ; H05F5/00

Abstract:
An integrated circuit including a structure of inductances on a semiconductor substrate, intended for operating at frequencies greater than several hundreds of MHz, including a first inductance formed by a conductive track and having first and second terminals respectively connected to each of the two ends of the conductive track, including a second inductance formed by the conductive track between the second terminal and any intermediary point of the conductive track connected to a third terminal, said second and third terminals forming the two terminals of the second inductance, and means for setting the third terminal to high impedance when the first inductance is used.
Public/Granted literature
- US20020013134A1 Integrated structure of inductances with shared values on a semiconductor substrate Public/Granted day:2002-01-31
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