发明授权
- 专利标题： Semiconductor manufacturing resolution enhancement system and method for simultaneously patterning different feature types
- 专利标题（中）： 半导体制造分辨率增强系统和方法，用于同时构图不同的特征类型
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申请号： US10283685申请日： 2002-10-29
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公开(公告)号： US06994939B1公开(公告)日： 2006-02-07
- 发明人: Kouros Ghandehari , Jean Y. Yang , Christopher A. Spence
- 申请人： Kouros Ghandehari , Jean Y. Yang , Christopher A. Spence
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理商 Mikio Ishimaru
- 主分类号： G03F9/00
- IPC分类号： G03F9/00
摘要：
A method and system of making a mask with a transparent substrate thereon is provided. A first resolution enhancement structure is formed on the first portion of the transparent substrate. A second resolution enhancement structure is formed on a second portion of the transparent substrate, with the second resolution enhancement structure different from the first resolution enhancement structure.
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