Invention Grant
US06998059B2 Method for manufacturing a silicon sensor and a silicon sensor 有权
硅传感器和硅传感器的制造方法

Method for manufacturing a silicon sensor and a silicon sensor
Abstract:
The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.
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