Invention Grant
- Patent Title: Method for manufacturing a silicon sensor and a silicon sensor
- Patent Title (中): 硅传感器和硅传感器的制造方法
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Application No.: US10472465Application Date: 2002-03-21
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Publication No.: US06998059B2Publication Date: 2006-02-14
- Inventor: Heikki Kuisma , Juha Lahdenperä , Risto Mutikainen
- Applicant: Heikki Kuisma , Juha Lahdenperä , Risto Mutikainen
- Applicant Address: FI Vantaa
- Assignee: VTI Technologies Oy
- Current Assignee: VTI Technologies Oy
- Current Assignee Address: FI Vantaa
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: FI20010582 20010321
- International Application: PCT/FI02/00241 WO 20020321
- International Announcement: WO02/082100 WO 20021017
- Main IPC: C23F1/00
- IPC: C23F1/00

Abstract:
The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.
Public/Granted literature
- US20040074301A1 Method for manufacturing a silicon sensor and a silicon sensor Public/Granted day:2004-04-22
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