公开(公告)号：US20060213269A1

公开(公告)日：2006-09-28

申请号：US11232922

申请日：2005-09-23

Applicant: Jaakko Ruohio ,  Risto Mutikainen

Inventor： Jaakko Ruohio ,  Risto Mutikainen

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01L9/0073 ,  G01P15/0802

Abstract: The present invention relates to measuring devices for use in physical measuring, and in particular to capacitive sensors. In the sensor according to the invention, the shape of the stationary electrode (3), (4), (12), (17-20), (27-28) is stepped. By means of the invention, a method for manufacturing a capacitive sensor with improved linearity is achieved, as well as a capacitive sensor suitable for use particularly in small capacitive sensor solutions.

Abstract translation: 本发明涉及用于物理测量，特别是电容传感器的测量装置。 在根据本发明的传感器中，固定电极（3），（4），（12），（17-20），（27-28）的形状是阶梯状的。 通过本发明，实现了一种制造具有改进的线性度的电容传感器的方法，以及适用于特别是小型电容式传感器解决方案的电容传感器。

公开(公告)号：US07555950B2

公开(公告)日：2009-07-07

申请号：US11232922

申请日：2005-09-23

Applicant: Jaakko Ruohio ,  Risto Mutikainen

Inventor： Jaakko Ruohio ,  Risto Mutikainen

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01L9/0073 ,  G01P15/0802

Abstract: The present invention relates to measuring devices for use in physical measuring, and in particular to capacitive sensors. In the sensor according to the invention, the shape of the stationary electrode (3), (4), (12), (17-20), (27-28) is stepped. Through the invention, a method for manufacturing a capacitive sensor with improved linearity is achieved, as well as a capacitive sensor suitable for use particularly in small capacitive sensor solutions.

Abstract translation: 本发明涉及用于物理测量，特别是电容传感器的测量装置。 在根据本发明的传感器中，固定电极（3），（4），（12），（17-20），（27-28）的形状是阶梯状的。 通过本发明，实现了线性度提高的电容式传感器的制造方法，以及适用于小容量传感器解决方案的电容式传感器。

公开(公告)号：US20060046329A1

公开(公告)日：2006-03-02

申请号：US11225210

申请日：2005-09-14

Applicant: Heikki Kuisma ,  Juha Lahdenpera ,  Risto Mutikainen

Inventor： Heikki Kuisma ,  Juha Lahdenpera ,  Risto Mutikainen

IPC: H01L21/00

CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  B81C2201/0132 ,  B81C2201/0133 ,  G01P15/0802 ,  G01P2015/0817

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched openings at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

Abstract translation: 本发明涉及一种硅传感器结构和硅传感器的制造方法。 根据该方法，通过蚀刻开口形成单晶硅晶片（10），至少一个弹簧元件结构（7）和连接到所述弹簧元件构型（7）的至少一个地震块（8）。 根据本发明，通过干蚀刻方法制造延伸穿过硅晶片深度的开口和沟槽（8），并且用于控制弹簧元件构型（7）的弹簧常数的蚀刻工艺基于湿蚀刻 方法。

公开(公告)号：US06938485B2

公开(公告)日：2005-09-06

申请号：US10774688

申请日：2004-02-10

Applicant: Heikki Kuisma ,  Juha Lahdenperä ,  Risto Mutikainen

Inventor： Heikki Kuisma ,  Juha Lahdenperä ,  Risto Mutikainen

IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01G7/00

CPC classification number: G01P15/125 ,  B81B3/0013 ,  B81B2201/0235 ,  B81C1/0096 ,  B81C2201/112 ,  G01P15/08 ,  G01P15/0802

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode (4) and a stationary electrode (5), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

Abstract translation: 本发明涉及用于测量加速度的测量装置，具体涉及电容式加速度传感器。 根据本发明的电容式加速度传感器包括由可动电极（4）和固定电极（5）组成的一对电极，并且与该对电极相关联，具有特殊涂层的隔离突起。 本发明提供了一种改进的，更耐用的传感器结构，其能够承受比过去结构更好的过载情况下的磨损。

公开(公告)号：US07302857B2

公开(公告)日：2007-12-04

申请号：US10503089

申请日：2003-02-10

Applicant: Heikki Kuisma ,  Juha Lahdenperä ,  Risto Mutikainen

Inventor： Heikki Kuisma ,  Juha Lahdenperä ,  Risto Mutikainen

IPC: G01B7/16 ,  G01L1/00

CPC classification number: G01L19/04 ,  G01L9/0073 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/084

Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d2) of the partial area of the insulating layer is less than a thickness (d1) of the support areas of the insulating area.

Abstract translation: 一种传感器的制造方法，包括在导电性基板的顶部形成绝缘层，在绝缘层的顶部形成导电性电极。 此外，绝缘层形成为包括形成在导电电极的边缘处的支撑区域和形成在导电电极下方的部分区域，并且绝缘层的局部区域的厚度（d 2）小于厚度（d 1）绝缘区域的支撑区域。

公开(公告)号：US06998059B2

公开(公告)日：2006-02-14

申请号：US10472465

申请日：2002-03-21

Applicant: Heikki Kuisma ,  Juha Lahdenperä ,  Risto Mutikainen

Inventor： Heikki Kuisma ,  Juha Lahdenperä ,  Risto Mutikainen

IPC: C23F1/00

CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  B81C2201/0132 ,  B81C2201/0133 ,  G01P15/0802 ,  G01P2015/0817

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

Abstract translation: 本发明涉及一种硅传感器结构和硅传感器的制造方法。 根据该方法，通过蚀刻开口形成单晶硅晶片（10），至少一个弹簧元件构造（7）和连接到所述弹簧元件构型（7）的至少一个地震块（8）。 根据本发明，通过干蚀刻方法制造延伸穿过硅晶片深度的开口和沟槽（8），并且用于控制弹簧元件构型（7）的弹簧常数的蚀刻工艺基于湿蚀刻 方法。

公开(公告)号：US20050105245A1

公开(公告)日：2005-05-19

申请号：US10503089

申请日：2003-02-10

Applicant: Heikki Kuisma ,  Juha Lahdenpera ,  Risto Mutikainen

Inventor： Heikki Kuisma ,  Juha Lahdenpera ,  Risto Mutikainen

IPC: G01L9/00 ,  G01L19/04 ,  G01P15/08 ,  G01P15/125 ,  H01G4/06

CPC classification number: G01L19/04 ,  G01L9/0073 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/084

Abstract: This publication discloses a method for creating a sensor construction. According to the method, on top of a conducting substrate (2), an insulating layer (5) is formed and connected to the micromechanical construction. According to the invention, the insulating layer (5) is formed to be thicker (14) in the support area (16) than in the other areas, or thinner (13) in the area of the electrode (8) than in the support area (16) of the sensor.

Abstract translation: 该出版物公开了一种用于创建传感器结构的方法。 根据该方法，在导电基板（2）的顶部形成绝缘层（5）并与微机械结构连接。 根据本发明，绝缘层（5）形成为在支撑区域（16）中比在电极（8）的区域中的其他区域或更薄（13）中的厚度大于支撑区域（16）中的厚度（14） 传感器的区域（16）。