Method for integrated manufacturing of split gate flash memory with high voltage MOSFETS

Invention Grant

US06998304B2 Method for integrated manufacturing of split gate flash memory with high voltage MOSFETS 失效

Title translation: 具有高压MOSFET的分闸式闪存的集成制造方法

Please log in to see more content

Patent Title: Method for integrated manufacturing of split gate flash memory with high voltage MOSFETS
Patent Title (中): 具有高压MOSFET的分闸式闪存的集成制造方法
Application No.: US10791599

Application Date: 2004-03-01
Publication No.: US06998304B2

Publication Date: 2006-02-14
Inventor: Haw-Chuan Wu , Jiann-Tyng Tzeng , David Ho
Applicant: Haw-Chuan Wu , Jiann-Tyng Tzeng , David Ho
Applicant Address: TW Hsin Chu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsin Chu
Agent R. W. Tung
Main IPC: H01L21/8238
IPC: H01L21/8238

Method for integrated manufacturing of split gate flash memory with high voltage MOSFETS

Abstract:

A method for integrated processing of a high Voltage MOSFET device and a split gate MOSFET device whereby a novel method is provided to form the split gate device and the high voltage MOSFET device in parallel processing steps including an oxide formation step whereby an oxide spacer layer in a split gate device is formed using about the same overall thermal budget while forming in parallel a thick gate oxide for a an embedded high voltage MOSFET device.

Abstract(Chinese):

一种用于高压MOSFET器件和分离栅极MOSFET器件的集成处理的方法，由此提供了一种新颖的方法，以并行处理步骤形成分离栅极器件和高电压MOSFET器件，其包括氧化物形成步骤，其中氧化物间隔层使用大致相同的总体热预算形成分离栅极器件，同时并联形成用于嵌入式高压MOSFET器件的厚栅极氧化物。

Public/Granted literature

US20050191800A1 Method for integrated manufacturing of split gate flash memory with high voltage MOSFETS Public/Granted day:2005-09-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS