发明授权
- 专利标题： Method of reworking layers over substrate
- 专利标题（中）： 在衬底上重新加工层的方法
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申请号： US10605238申请日： 2003-09-17
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公开(公告)号： US06998347B2公开(公告)日： 2006-02-14
- 发明人: Min-Yi Hsu , Hsin-Jung Ho , Kun-Shin Huang , Yi-Nan Chen , Kaanlu Tzou
- 申请人： Min-Yi Hsu , Hsin-Jung Ho , Kun-Shin Huang , Yi-Nan Chen , Kaanlu Tzou
- 申请人地址： TW Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Taoyuan
- 代理机构： Jianq Chyun IP Office
- 优先权： TW92120185A 20030724
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method of reworking an integrated circuit device is described. A substrate having a dielectric layer, a barrier layer, a conductive layer and an anti-reflective layer formed thereon, is provided. The method of reworking the barrier layer, the conductive layer and the anti-reflective layer comprises removing the anti-reflection layer by performing a dry etching process, removing the conductive layer by performing a wet etching process, and then removing the barrier layer by performing a chemical machine polishing process.
公开/授权文献
- US20050037622A1 [METHOD OF REWORKING INTEGRATED CIRCUIT DEVICE] 公开/授权日：2005-02-17
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