发明授权
- 专利标题： Cleaning method, method for fabricating semiconductor device and cleaning solution
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申请号： US10284191申请日： 2002-10-31
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公开(公告)号： US06998352B2公开(公告)日： 2006-02-14
- 发明人: Hidemitsu Aoki , Hiroaki Tomimori , Kenichi Yamamoto
- 申请人： Hidemitsu Aoki , Hiroaki Tomimori , Kenichi Yamamoto
- 申请人地址： JP Kanagawa
- 专利权人： NEC Electronics Corporation
- 当前专利权人： NEC Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2001-338017 20011102
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A cleaning solution having an oxidation-reduction potential lower than that of pure water and a pH value of 4 or below is used to remove metal contamination, thereby efficiently removing the metal contamination adhered onto a surface of a substrate without damaging an underlayer.
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