发明授权
- 专利标题： Method of producing a dopant gas species
- 专利标题（中）： 制造掺杂气体种类的方法
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申请号： US11015740申请日： 2004-12-20
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公开(公告)号： US06998626B1公开(公告)日： 2006-02-14
- 发明人: Geoffrey Ryding , Shu Satoh
- 申请人： Geoffrey Ryding , Shu Satoh
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理商 Boult Wade Tennant
- 主分类号： H01J37/317
- IPC分类号： H01J37/317 ; H01J49/10
摘要：
This invention relates to a method of producing a dopant gas species containing a required dopant element for implanting in a target and to an ion source for implementing such a method. In particular, although not exclusively, this invention relates to producing dopant ions for implanting in semiconductor wafers using an ion implanter. The present invention provides a method of producing a dopant gas species containing a required dopant element for implanting in a target, the method comprising: exposing a source mass of the element to gaseous bromine and element react to form a reactant product, and ionising the reactant product to produce ions of the dopant gas species.
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