发明授权
- 专利标题： Method of depositing dielectric films
- 专利标题（中）： 沉积介质膜的方法
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申请号： US10894872申请日： 2004-07-20
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公开(公告)号： US07001850B2公开(公告)日： 2006-02-21
- 发明人: Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
- 申请人： Srinivas D Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials Inc.
- 当前专利权人： Applied Materials Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
公开/授权文献
- US20050020048A1 Method of depositing dielectric films 公开/授权日：2005-01-27
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