Invention Grant
US07002156B2 Detection system including avalanche photodiode for use in harsh environments
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检测系统包括用于恶劣环境的雪崩光电二极管
- Patent Title: Detection system including avalanche photodiode for use in harsh environments
- Patent Title (中): 检测系统包括用于恶劣环境的雪崩光电二极管
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Application No.: US10994980Application Date: 2004-11-19
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Publication No.: US07002156B2Publication Date: 2006-02-21
- Inventor: Peter M. Sandvik , Dale M. Brown , Stephen D. Arthur , Kevin S. Matocha , James W. Kretchmer
- Applicant: Peter M. Sandvik , Dale M. Brown , Stephen D. Arthur , Kevin S. Matocha , James W. Kretchmer
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Ann M. Agosti; Patrick K. Patnode
- Main IPC: G01J1/24
- IPC: G01J1/24

Abstract:
A detection system for detecting gamma rays including a scintillator crystal for receiving at least one gamma ray and generating at least one ultraviolet ray and an avalanche photodiode for detecting the ultraviolet ray. The avalanche photodiode includes: a substrate having a first dopant; a first layer having a second dopant, positioned on top of the substrate; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned above of the first layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the first layer. The avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape.
Public/Granted literature
- US20050098844A1 Detection system including avalanche photodiode for use in harsh environments Public/Granted day:2005-05-12
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