公开(公告)号：US07098487B2

公开(公告)日：2006-08-29

申请号：US10329981

申请日：2002-12-27

Applicant: Mark Philip D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Peter M. Sandvik

Inventor： Mark Philip D'Evelyn ,  Dong-Sil Park ,  Steven LeBoeuf ,  Larry Rowland ,  Kristi Narang ,  Huicong Hong ,  Peter M. Sandvik

IPC: H01L33/00

CPC classification number: H01L33/32 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B7/005 ,  C30B29/403 ,  C30B29/406

Abstract: There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 104 cm−1, and having no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

Abstract translation: 提供了至少约2毫米直径的GaN单晶，位错密度小于约10 -4厘米-1，并且没有倾斜边界。 还公开了形成GaN单晶的方法。 该方法包括在室中提供成核中心，GaN源材料和GaN溶剂。 该室被加压。 在室中产生第一和第二温度分布，使得溶剂在室的成核区域中过饱和。 第一和第二温度分布在室内具有不同的温度梯度。

公开(公告)号：US06784430B2

公开(公告)日：2004-08-31

申请号：US10277940

申请日：2002-10-23

Applicant: Kevin S. Matocha ,  Jeffrey B. Fedison ,  James W. Kretchmer ,  Dale M. Brown ,  Peter M. Sandvik

Inventor： Kevin S. Matocha ,  Jeffrey B. Fedison ,  James W. Kretchmer ,  Dale M. Brown ,  Peter M. Sandvik

IPC: H01L2714

CPC classification number: G01J5/0014 ,  G01J1/0488 ,  G01J1/42 ,  G01J5/602 ,  H04M3/382 ,  H04M3/42314 ,  H04M3/4234

Abstract: A flame sensor for combustion flame temperature determination comprises elongated extensions that are positioned with parallel interdigitated longitudinal axis with respect to one another. An optical spectrometer comprises the sensor and a system comprises the sensor. A method for combustion flame temperature determination comprises obtaining a first photodiode signal and a second photodiode signal by using photodiode devices comprising photodiodes with elongated extending interdigitated digits. A method of fabricating a flame sensor for combustion flame temperature determination, comprises forming first and second photodiodes with elongated extending interdigitated digits.

Abstract translation: 用于燃烧火焰温度测定的火焰传感器包括细长延伸部，其相对于彼此以平行的叉指纵轴线定位。 光谱仪包括传感器，系统包括传感器。 一种用于燃烧火焰温度测定的方法包括通过使用包括具有细长延伸的叉指位的光电二极管的光电二极管器件来获得第一光电二极管信号和第二光电二极管信号。 一种制造用于燃烧火焰温度测定的火焰传感器的方法，包括：形成第一和第二光电二极管，其具有细长延伸的叉指位数。

公开(公告)号：US07112796B2

公开(公告)日：2006-09-26

申请号：US10701472

申请日：2003-11-06

Applicant: Dale M Brown ,  Peter M Sandvik ,  Jeffrey B Fedison ,  Kevin S Matocha ,  Thomas E Johnson

Inventor： Dale M Brown ,  Peter M Sandvik ,  Jeffrey B Fedison ,  Kevin S Matocha ,  Thomas E Johnson

IPC: G01J5/30

CPC classification number: G01J5/0014 ,  G01J5/602 ,  H04M3/382 ,  H04M3/42314 ,  H04M3/4234

Abstract: An optical spectrometer for combustion flame temperature determination includes at least two photodetectors positioned for receiving light from a combustion flame, each of the at least two photodetectors having a different, overlapping bandwidth for detecting a respective output signal in an ultraviolet emission band; and a computer for subtracting a respective output signal of a first one of the at least two photodetectors from a respective output signal of a second one of the at least two photodetectors to obtain a segment signal, and using the segment signal to determine the combustion flame temperature.

Abstract translation: 用于燃烧火焰温度测定的光谱仪包括至少两个光电检测器，定位成用于接收来自燃烧火焰的光，所述至少两个光电检测器中的每一个具有不同的重叠带宽，用于检测紫外线发射带中的相应输出信号; 以及计算机，用于从所述至少两个光电检测器中的第二个的相应输出信号中减去所述至少两个光电检测器中的第一个的相应输出信号以获得段信号，并且使用所述段信号来确定所述燃烧火焰 温度。

公开(公告)号：US06838741B2

公开(公告)日：2005-01-04

申请号：US10314986

申请日：2002-12-10

Applicant: Peter M. Sandvik ,  Dale M. Brown ,  Stephen D. Arthur ,  Kevin S. Matocha ,  James W. Kretchmer

Inventor： Peter M. Sandvik ,  Dale M. Brown ,  Stephen D. Arthur ,  Kevin S. Matocha ,  James W. Kretchmer

IPC: G01J1/02 ,  H01J20060101 ,  H01L31/0232 ,  H01L31/0248 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/06 ,  H01L31/062 ,  H01L31/107 ,  H01L31/113 ,  H01L31/115

CPC classification number: H01L31/02322 ,  H01L31/02161 ,  H01L31/03044 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/115

Abstract: An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials. According to an embodiment of the present invention, an avalanche photodiode for detecting ultraviolet photons comprises a substrate having a first dopant; a first layer having the first dopant, positioned on top of the substrate; a second layer having a second dopant, positioned on top of the first layer; a third layer having a second dopant, positioned on top of the second layer; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned on top of the third layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the third layer; wherein the avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape; and wherein the avalanche photodiode operates in an environment comprising a temperature approximately equal to 150 degrees Celsius.

Abstract translation: 本发明的一个方面涉及一种雪崩光电二极管（APD）装置，用于在冲击水平接近250重力加速度（G）和/或温度接近或超过150°的恶劣的井下环境中的油井钻井应用 C.本发明的另一方面涉及使用SiC材料制造的APD器件。 本发明的另一方面涉及使用GaN材料制造的APD器件。 根据本发明的实施例，用于检测紫外光子的雪崩光电二极管包括具有第一掺杂剂的衬底; 具有第一掺杂剂的第一层，位于衬底的顶部; 具有位于所述第一层的顶部上的具有第二掺杂剂的第二层; 具有第二掺杂剂的第三层，位于所述第二层的顶部; 用于在雪崩光电二极管的表面上提供电钝化的钝化层; 用于限制移动离子迁移的磷硅酸盐玻璃层，位于第三层的顶部; 以及用于提供欧姆接触的一对金属电极，其中第一电极位于所述衬底下方，并且第二电极位于所述第三层之上; 其中所述雪崩光电二极管包括形成倾斜台面形状的第一侧壁和第二侧壁; 并且其中所述雪崩光电二极管在包括大约等于150摄氏度的温度的环境中操作。

公开(公告)号：US07367217B2

公开(公告)日：2008-05-06

申请号：US11683739

申请日：2007-03-08

Applicant: Edward B. Stokes ,  Peter M. Sandvik ,  Vinayak Tilak ,  Jeffrey B. Fedison ,  Elena Babes-Dornea ,  Renyan Qin ,  James W. Rose ,  Stanton E. Weaver

Inventor： Edward B. Stokes ,  Peter M. Sandvik ,  Vinayak Tilak ,  Jeffrey B. Fedison ,  Elena Babes-Dornea ,  Renyan Qin ,  James W. Rose ,  Stanton E. Weaver

IPC: G01N7/00 ,  G01N9/00

CPC classification number: G01N33/2841 ,  G01N27/4141

Abstract: A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.

Abstract translation: 一种用于检测充油电气设备中溶解的烃类气体的多气体传感器装置。 所述器件包括半导体衬底，沉积在可操作以感测各种气体的半导体衬底的表面上的一个或多个催化金属栅电极和沉积在半导体衬底的表面上的欧姆接触。 半导体衬底包括GaN，SiC，AlN，InN，AlGaN，InGaN和AlInGaN中的一种。 一种用于感测电气设备的充满油的储存器中的气体的方法，包括提供传感器装置，将传感器装置浸入充满油的储存器中，允许从油中排出的气体与一个或多个催化金属栅极 - 电极，当气体接触催化金属栅电极时改变气体并改变传感器的灵敏度。

公开(公告)号：US07254986B2

公开(公告)日：2007-08-14

申请号：US10319359

申请日：2002-12-13

Applicant: Edward B. Stokes ,  Peter M. Sandvik ,  Vinayak Tilak ,  Jeffrey B. Fedison ,  Elena Babes-Dornea ,  Renyan Qin ,  James W. Rose ,  Stanton E. Weaver

Inventor： Edward B. Stokes ,  Peter M. Sandvik ,  Vinayak Tilak ,  Jeffrey B. Fedison ,  Elena Babes-Dornea ,  Renyan Qin ,  James W. Rose ,  Stanton E. Weaver

IPC: G01N7/00 ,  G01N9/00

CPC classification number: G01N33/2841 ,  G01N27/4141

Abstract: A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, lnN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.

Abstract translation: 一种用于检测充油电气设备中溶解的烃类气体的多气体传感器装置。 所述器件包括半导体衬底，沉积在可操作以感测各种气体的半导体衬底的表面上的一个或多个催化金属栅电极和沉积在半导体衬底的表面上的欧姆接触。 半导体衬底包括GaN，SiC，AlN，InN，AlGaN，InGaN和AlInGaN中的一种。 一种用于感测电气设备的充满油的储存器中的气体的方法，包括提供传感器装置，将传感器装置浸入充满油的储存器中，允许从油中排出的气体与一个或多个催化金属栅极 - 电极，当气体接触催化金属栅电极时改变气体并改变传感器的灵敏度。

公开(公告)号：US07002156B2

公开(公告)日：2006-02-21

申请号：US10994980

申请日：2004-11-19

Applicant: Peter M. Sandvik ,  Dale M. Brown ,  Stephen D. Arthur ,  Kevin S. Matocha ,  James W. Kretchmer

Inventor： Peter M. Sandvik ,  Dale M. Brown ,  Stephen D. Arthur ,  Kevin S. Matocha ,  James W. Kretchmer

IPC: G01J1/24

CPC classification number: H01L31/02322 ,  H01L31/02161 ,  H01L31/03044 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/115

Abstract: A detection system for detecting gamma rays including a scintillator crystal for receiving at least one gamma ray and generating at least one ultraviolet ray and an avalanche photodiode for detecting the ultraviolet ray. The avalanche photodiode includes: a substrate having a first dopant; a first layer having a second dopant, positioned on top of the substrate; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned above of the first layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the first layer. The avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape.

Abstract translation: 一种用于检测伽马射线的检测系统，包括用于接收至少一个伽马射线并产生至少一个紫外线的闪烁体晶体和用于检测紫外线的雪崩光电二极管。 雪崩光电二极管包括：具有第一掺杂剂的衬底; 具有位于所述基板顶部上的具有第二掺杂剂的第一层; 用于在雪崩光电二极管的表面上提供电钝化的钝化层; 用于限制移动离子迁移的磷硅酸盐玻璃层，位于第一层之上; 以及用于提供欧姆接触的一对金属电极，其中第一电极位于所述衬底下方，并且第二电极位于所述第一层之上。 雪崩光电二极管包括形成倾斜台面形状的第一侧壁和第二侧壁。

公开(公告)号：US07119372B2

公开(公告)日：2006-10-10

申请号：US10693126

申请日：2003-10-24

Applicant: Edward B. Stokes ,  Mark P. D'Evelyn ,  Stanton E. Weaver ,  Peter M. Sandvik ,  Abasifreke U. Ebong ,  Xian-an Cao ,  Steven F. LeBoeuf ,  Nikhil R. Taskar

Inventor： Edward B. Stokes ,  Mark P. D'Evelyn ,  Stanton E. Weaver ,  Peter M. Sandvik ,  Abasifreke U. Ebong ,  Xian-an Cao ,  Steven F. LeBoeuf ,  Nikhil R. Taskar

IPC: H01L27/15

CPC classification number: H01L33/405 ,  H01L33/387 ,  H01L2933/0083

Abstract: A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).

Abstract translation: 倒装芯片发光二极管管芯（10,10'，10“）包括透光衬底（12,12'，12”）和半导体层（14,14'，14“），其被选择性地图案化 以限定装置台面（30,30'，30“）。 反射电极（34,34'，34“）设置在器件台面（30,30'，30”）上。 反射电极（34,34'，34“）包括设置在器件台面（30,30'，30”）上方的透光绝缘栅极（42,42'，60,80），欧姆材料 44,44'，44“，62）设置在绝缘栅极（42,42'，60,80）的开口处并与器件台面（30,30'，30”）形成欧姆接触， 设置在绝缘栅极（42,42'，60,80）上的导电反射膜（46,46'，46“）和欧姆材料（44,44'，44”，62）。 导电反射膜（46,46'，46“）与欧姆材料（44,44'，44”，62）电连通。