发明授权
- 专利标题: Method for manufacturing piezo-resonator
- 专利标题(中): 制造压电谐振器的方法
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申请号: US10968976申请日: 2004-10-21
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公开(公告)号: US07003875B2公开(公告)日: 2006-02-28
- 发明人: Masaaki Imura , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
- 申请人: Masaaki Imura , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
- 申请人地址: JP Tokyo
- 专利权人: TDK Corporation
- 当前专利权人: TDK Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2003-361567 20031022
- 主分类号: H05K3/02
- IPC分类号: H05K3/02 ; B44C1/22 ; H01L4/04
摘要:
A method for manufacturing a piezo-resonator including: a first step of forming an upper electrode layer 20 on the piezoelectric film 14, a second step of coating the upper electrode layer 20 with a resist 21 and of performing patterning on the resist so as to have a shape of the upper electrode, a third step of masking the patterned resist 21 and removing the upper electrode layer 20 other than masked portions and forming two or more first upper electrodes 15a, a fourth step of removing the resist 21, a fifth step of coating the first upper electrodes 15a with a resist and performing patterning on the resist so that the first upper electrodes 15a are partially exposed, a sixth step of etching each of the exposed first upper electrodes 15a by a specified thickness to form a second upper electrode 15b, and a seventh step of removing the resist 22.
公开/授权文献
- US20050090033A1 Method for manufacturing piezo-resonator 公开/授权日:2005-04-28
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