发明授权
US07005368B1 BUMP FORMING APPARATUS FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, CHARGE REMOVAL METHOD FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, CHARGE REMOVING UNIT FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, AND CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE
失效
用于充电外观半导体基板的封装形成装置,用于充电外观半导体基板的充电去除方法,充电外观半导体基板的充电单元和充电外观半导体基板
- 专利标题: BUMP FORMING APPARATUS FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, CHARGE REMOVAL METHOD FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, CHARGE REMOVING UNIT FOR CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE, AND CHARGE APPEARANCE SEMICONDUCTOR SUBSTRATE
- 专利标题(中): 用于充电外观半导体基板的封装形成装置,用于充电外观半导体基板的充电去除方法,充电外观半导体基板的充电单元和充电外观半导体基板
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申请号: US10651199申请日: 2003-08-29
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公开(公告)号: US07005368B1公开(公告)日: 2006-02-28
- 发明人: Shoriki Narita , Yasutaka Tsuboi , Masahiko Ikeya , Takaharu Mae , Shinji Kanayama
- 申请人: Shoriki Narita , Yasutaka Tsuboi , Masahiko Ikeya , Takaharu Mae , Shinji Kanayama
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Wenderoth, Lind & Ponack, L.L.P.
- 优先权: JP11-189053 19990702; JP11-293702 19991015; JP11-308855 19991029; JP11-323979 19991115; JP2000-184467 20000620
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removing charge of charge appearance semiconductor substrates, a charge removing unit for charge appearance semiconductor substrates, and a charge appearance semiconductor substrate. At least when the wafer is cooled after the bump bonding is connected on the wafer, electric charge accumulated on the wafer (202) because of the cooling is removed through direct contact with a post-forming bumps heating device (170), or the charge is removed by a decrease in temperature control so that charge can be removed in a noncontact state. Therefore, an amount of charge of the wafer can be reduced in comparison with the conventional art, so that the wafer is prevented from pyroelectric breakdown and damage such as a break or the like to the wafer itself.
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