发明授权
- 专利标题： Magnetoresistance element and magnetoresistance storage element and magnetic memory
- 专利标题（中）： 磁电阻元件和磁阻存储元件和磁存储器
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申请号： US10470670申请日： 2002-06-04
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公开(公告)号： US07005691B2公开(公告)日： 2006-02-28
- 发明人: Akihiro Odagawa , Masayoshi Hiramoto , Nozomu Matsukawa , Masahiro Deguchi
- 申请人： Akihiro Odagawa , Masayoshi Hiramoto , Nozomu Matsukawa , Masahiro Deguchi
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Merchant & Gould P.C.
- 优先权： JP2001-167971 20010604; JP2001-167973 20010604
- 国际申请： PCT/JP02/05494 WO 20020604
- 国际公布： WO02/099906 WO 20021212
- 主分类号： H01L31/119
- IPC分类号： H01L31/119
摘要：
A magnetoresistance element, wherein a first electric conductor is so formed as to contact almost the center of the surface opposite to a non-magnetic layer of a first ferromagnetic layer so formed as to sandwich, along with a second ferromagnetic layer, the non-magnetic layer, and an insulator so formed as to cover at least the side surface of the first ferromagnetic layer and the non-magnetic layer is formed so as to cover the peripheral edge of the surface of the first ferromagnetic layer, whereby it is possible to prevent a leakage current from flowing from the first electric conductor to a second electric conductor along the side surfaces of the first ferromagnetic layer, the non-magnetic layer and the second ferromagnetic layer, and to make uniform a bias current running from the first electric conductor to the second electric conductor to thereby restrict variations in magnetoresistance characteristics such as MR value and junction resistance.
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