发明授权
- 专利标题： Synchronous rectifier circuit and power supply
- 专利标题（中）： 同步整流电路和电源
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申请号： US10882672申请日： 2004-07-02
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公开(公告)号： US07005834B2公开(公告)日： 2006-02-28
- 发明人: Takayuki Iwasaki , Kozo Sakamoto , Masaki Shiraishi , Nobuyoshi Matsuura , Tomoaki Uno
- 申请人： Takayuki Iwasaki , Kozo Sakamoto , Masaki Shiraishi , Nobuyoshi Matsuura , Tomoaki Uno
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-189941 20030702
- 主分类号： G05F1/613
- IPC分类号： G05F1/613 ; G05F1/656
摘要：
In a power supply of a synchronous rectification type, the self-turn on phenomenon of MOSFET is suppressed without increase of the drive loss to thereby improve the power efficiency. In a synchronous rectifier circuit, a threshold value of a commutation MOSFET is made higher than that of a rectification MOSFET and particularly a threshold value of a commutation MOSFET 3 is made 0.5V or more higher than that of a rectification MOSFET 2. The threshold value of the rectification MOSFET 2 is lower than 1.5V and the threshold of the commutation MOSFET 3 is higher than 2.0V.
公开/授权文献
- US20050007078A1 Synchronous rectifier circuit and power supply 公开/授权日：2005-01-13
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