发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US10422773申请日: 2003-04-25
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公开(公告)号: US07006177B2公开(公告)日: 2006-02-28
- 发明人: Yoshiharu Hirakata , Shunpei Yamazaki
- 申请人: Yoshiharu Hirakata , Shunpei Yamazaki
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP09-123001 19970425
- 主分类号: G02F1/1343
- IPC分类号: G02F1/1343 ; G02F1/1333
摘要:
To provide an active matrix type liquid crystal display device having fine display performance, an interlayer insulating film 104 covering TFTs 102, 103 formed on a substrate 101 is first flattened by mechanical polishing typified by a CMP. Then pixel electrodes 106, 107 are formed thereon, and further, an insulating layer 108 covering the pixel electrodes is formed. And then, the insulating layer 108 is flattened by second mechanical polishing so that the surfaces of the pixel electrodes and the surface of the insulating layers 112, 113 form the same plane. By this, a difference in level disappears, and it is possible to prevent lowering of contrast or the like due to poor orientation of a liquid crystal material, diffused reflection of light, and the like.
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