发明授权
- 专利标题： Epitaxial growth of germanium photodetector for CMOS imagers
- 专利标题（中）： 用于CMOS成像器的锗光电探测器的外延生长
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申请号： US11069424申请日： 2005-02-28
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公开(公告)号： US07008813B1公开(公告)日： 2006-03-07
- 发明人: Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet , Sheng Teng Hsu
- 申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet , Sheng Teng Hsu
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc..
- 当前专利权人： Sharp Laboratories of America, Inc..
- 当前专利权人地址： US WA Camas
- 代理商 David C. Ripma
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of fabricating a germanium photodetector includes preparing a silicon wafer as a silicon substrate; depositing a layer of silicon nitride on the silicon substrate; patterning and etching the silicon nitride layer; depositing a first germanium layer on the silicon nitride layer; patterning and etching the germanium layer wherein a portion of the germanium layer is in direct physical contact with the silicon substrate; depositing a layer of silicon oxide on the germanium layer wherein the germanium layer is encapsulated by the silicon oxide layer; annealing the structure at a temperature wherein the germanium melts and the other layers remain solid; growing a second, single-crystal layer of germanium on the structure by liquid phase epitaxy; selectively removing the silicon oxide layer; and completing the germanium photodetector.
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