Invention Grant
- Patent Title: PSRAM for performing write-verify-read function
- Patent Title (中): PSRAM用于执行写入验证读取功能
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Application No.: US10876778Application Date: 2004-06-28
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Publication No.: US07009898B2Publication Date: 2006-03-07
- Inventor: Sang Kwon Lee , Tae Woo Kwon
- Applicant: Sang Kwon Lee , Tae Woo Kwon
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Heller Ehrman LLP
- Priority: KR10-2004-0016539 20040311
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A PSRAM performs a Write-Verify-Read function at a test mode, thereby easily analyzing defects. The PSRAM comprises a test mode decoder, a refresh control block and a precharge control block. The test mode decoder generates a test mode control signal for performing a WVR function when a test mode starts. The refresh control block selectively performs a refresh operation in response to the test mode control signal. The precharge control block selectively performs a precharge operation in response to the test mode control signal outputted from the test mode decoder. Here, the test mode control signal is activated at the test mode so that the refresh operation and the precharge operation are not performed.
Public/Granted literature
- US20050201167A1 PSRAM for performing write-verify-read function Public/Granted day:2005-09-15
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