- 专利标题： Photomask and method of structuring a photoresist by double exposure with imaging auxiliary structures and different exposure tools
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申请号： US10331641申请日： 2002-12-30
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公开(公告)号： US07011936B2公开(公告)日： 2006-03-14
- 发明人: Christoph Nölscher , Armin Semmler , Günther Czech
- 申请人： Christoph Nölscher , Armin Semmler , Günther Czech
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理商 Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- 优先权： DE10164306 20011228
- 主分类号： G03C5/00
- IPC分类号： G03C5/00
摘要：
A method for structuring photoresists and a corresponding photolithography mask utilize a principal structure and an auxiliary structure. In addition to the principal structure to be imaged, the photomask has an imaging auxiliary structure, which improves the imaging of the principal structure. The portions of the imaging auxiliary structure in the photoresist are exposed in a second exposure step and thereby likewise changed into a form that is soluble in a developer. Only the principal structure remains on the substrate after development.
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