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    Method for experimentally verifying imaging errors in optical exposure units
    4.
    发明授权
    Method for experimentally verifying imaging errors in optical exposure units 失效
    用于实验验证光学曝光单元中的成像误差的方法

    公开(公告)号：US06696208B2

    公开(公告)日：2004-02-24

    申请号：US10135471

    申请日：2002-04-30

    申请人： Günther Czech ,  Ernst-christian Richter ,  Ulrich Scheler ,  Michael Sebald

    发明人： Günther Czech ,  Ernst-christian Richter ,  Ulrich Scheler ,  Michael Sebald

    IPC分类号： G03F900

    CPC分类号： G03F1/84 ,  G03F7/265 ,  G03F7/38 ,  G03F7/70616

    摘要： Imaging errors in optical exposure units for the lithographic structuring of semiconductors are determined. First, a latent image of a mask is first produced in a photoactivatable layer by exposure using the optical exposure unit to be tested. After heat treating for increasing the contrast and developing the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist. This leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The method permits testing of optical exposure units under production conditions and thus facilitates the adjustment and the checking of all components of the exposure system used for the production of microchips.

    摘要翻译： 确定半导体光刻结构的光学曝光单元中的成像误差。 首先，首先通过使用要测试的光学曝光单元的曝光在可光活化层中产生掩模的潜像。 在热处理以增加对比度和显影曝光的抗蚀剂之后，后者用优选扩散到光致抗蚀剂的暴露部分中的扩增剂处理。 在那里，它与光致抗蚀剂的组反应。 这导致暴露部分中抗蚀剂的层厚度增加。 例如通过扫描电子显微镜可以产生光致抗蚀剂表面的形貌图，然后通过位于掩模图像之外的突起来指示成像误差。 该方法允许在生产条件下对光学曝光单元进行测试，从而有助于调整和检查用于生产微芯片的曝光系统的所有部件。

    Method for experimentally verifying imaging errors in photomasks
    5.
    发明授权
    Method for experimentally verifying imaging errors in photomasks 失效
    用于实验验证光掩模中的成像误差的方法

    公开(公告)号：US06800407B2

    公开(公告)日：2004-10-05

    申请号：US10135684

    申请日：2002-04-30

    申请人： Günther Czech ,  Ernst-Christian Richter ,  Ulrich Scheler ,  Michael Sebald

    发明人： Günther Czech ,  Ernst-Christian Richter ,  Ulrich Scheler ,  Michael Sebald

    IPC分类号： G03F900

    CPC分类号： G03F1/84 ,  G03F7/70616

    摘要： The method enables determining imaging errors of photomasks for the lithographic structuring of semiconductors. A latent image of the mask is first produced in a photoactivatable layer by exposure. After heat treatment carried out for increasing the contrast and development of the exposed resist, the latter is treated with an amplification agent which preferably diffuses into the exposed parts of the photoresist. There, it reacts with groups of the photoresist, which leads to an increase in the layer thickness of the resist in the exposed parts. A topographical image of the surface of the photoresist, which can be created, for example, by scanning electron microscopy, then indicates imaging errors by protuberances which are located outside the image of the mask. The mask layout can be tested under production conditions and the adjustment and the checking of all components of the phototransfer system used for the production of microchips is facilitated.

    摘要翻译： 该方法能够确定用于半导体的光刻结构的光掩模的成像误差。 首先通过曝光在可光活化层中产生掩模的潜像。 在进行热处理以增加曝光的抗蚀剂的对比度和显影后，后者用优选扩散到光致抗蚀剂的暴露部分中的扩增剂处理。 在那里，它与光致抗蚀剂的组反应，这导致暴露部分中抗蚀剂的层厚度增加。 例如通过扫描电子显微镜可以产生光致抗蚀剂表面的形貌图，然后通过位于掩模图像之外的突起来指示成像误差。 掩模布局可以在生产条件下进行测试，并且促进了用于生产微芯片的光转移系统的所有组件的调整和检查。