发明授权
- 专利标题： High mobility CMOS circuits
- 专利标题（中）： 高移动性CMOS电路
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申请号： US10701526申请日： 2003-11-06
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公开(公告)号： US07015082B2公开(公告)日： 2006-03-21
- 发明人: Bruce B. Doris , Oleg G. Gluschenkov , Huilong Zhu
- 申请人： Bruce B. Doris , Oleg G. Gluschenkov , Huilong Zhu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Greenblum & Bernstein P.L.C.
- 代理商 Joseph P. Abate
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84 ; H01L21/336 ; H01L21/8237 ; H01L27/01 ; H01L29/76
摘要：
A semiconductor device has selectively applied thin tensile films and thin compressive films, as well as thick tensile films and thick compressive films, to enhance electron and hole mobility in CMOS circuits. Fabrication entails steps of applying each film, and selectively removing each applied film from areas that would not experience performance benefit from the applied stressed film.
公开/授权文献
- US20050098829A1 High mobility CMOS circuits 公开/授权日：2005-05-12
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