Method of simultaneously making a pair of transistors with insulated gates having respectively a thin oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistors

Invention Grant

US07015105B2 Method of simultaneously making a pair of transistors with insulated gates having respectively a thin oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistors 有权

Title translation: 同时制造具有分别具有薄氧化物和厚氧化物的绝缘栅极的一对晶体管的方法，以及包括这种一对晶体管的相应集成电路

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Patent Title: Method of simultaneously making a pair of transistors with insulated gates having respectively a thin oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistors
Patent Title (中): 同时制造具有分别具有薄氧化物和厚氧化物的绝缘栅极的一对晶体管的方法，以及包括这种一对晶体管的相应集成电路
Application No.: US10169237

Application Date: 2001-10-26
Publication No.: US07015105B2

Publication Date: 2006-03-21
Inventor: Laurence Boissonnet , Dominique Golanski , Bruno Rauber , Andre Granier
Applicant: Laurence Boissonnet , Dominique Golanski , Bruno Rauber , Andre Granier
Applicant Address: FR Montrouge
Assignee: STMicroelectronics, S.A.
Current Assignee: STMicroelectronics, S.A.
Current Assignee Address: FR Montrouge
Agency: Fleit, Kain, Gibbons, Gutman, Bongini & Bianco P.L.
Agent Lisa K. Jorgenson; Jon A. Gibbons
Priority: FR0013949 20001030
International Application: PCT/FR01/03343 WO 20011026
International Announcement: WO02/37560 WO 20020510
Main IPC: H01L21/8234
IPC: H01L21/8234

Method of simultaneously making a pair of transistors with insulated gates having respectively a thin oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistors

Abstract:

A method of simultaneously fabricating a pair of insulated gate transistors respectively having a thin oxide and a thick oxide, and an integrated circuit including a pair of transistors of this kind. Forming low-doped NLDD areas of the thin oxide second transistor includes implanting a first dopant having a first concentration and implanting a second dopant having a second concentration lower than the first concentration. Forming low-doped areas NLDD of the first, thick oxide transistor includes only said implantation of the second dopant.

Abstract(Chinese):

同时制造分别具有薄氧化物和厚氧化物的一对绝缘栅极晶体管的方法，以及包括这种一对晶体管的集成电路。形成薄氧化物第二晶体管的低掺杂NLDD区域包括植入具有第一浓度的第一掺杂物并且注入具有低于第一浓度的第二浓度的第二掺杂剂。形成第一厚氧化物晶体管的低掺杂区域NLDD仅包括第二掺杂剂的所述注入。

Public/Granted literature

US20030155618A1 Method of simultaneously making a pair of transistors with insulated grids having respectively a fine oxide and a thick oxide, and corresponding integrated circuit comprising such a pair of transistors Public/Granted day:2003-08-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺