A solid-state image sensor of the present invention includes a semiconductor substrate 1 having a plurality of pixels, and each of the pixels comprises an impurity layer a photoelectric converting layer, a read out region, and a gate electrode. The impurity layer includes an adjoining portion adjacent to a portion of the substrate directly beneath the gate electrode The adjoining portion includes sub-portions aligned along a width direction of a gate that is orthogonal to a transfer direction of a signal charge and a thickness direction of the substrate. An impurity density in the sub-portion 2a including a center of the adjoining portion is lower than that in the sub-portions.