发明授权
- 专利标题： Low-K dielectric material system for IC application
- 专利标题（中）： 低K电介质材料系统用于IC应用
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申请号： US11037995申请日： 2005-01-18
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公开(公告)号： US07015581B2公开(公告)日： 2006-03-21
- 发明人: Jon A. Casey , Daniel C. Edelstein
- 申请人： Jon A. Casey , Daniel C. Edelstein
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser
- 代理商 Margaret A. Pepper, Esq.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/4763
摘要：
A low-k dielectric for use as an interlayer for an interconnect structure is provided. The dielectric of the present invention is an alkaline boron silicate glass which when formulated in certain compositional ranges can undergo spinodal decomposition when processed using certain thermal profiles. Spinodal decomposition is a chemical and physical separation of the silicate glass into a distinct interpenetrating microstructure which contains a substantially pure silicon dioxide network and a boron-rich network. The dimension (i.e., scale), and the amount of separation can be controlled through compositional and thermal control during the processing of the silicate glass.
公开/授权文献
- US20050200025A1 Low-k dielectric material system for IC application 公开/授权日：2005-09-15
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