摘要:
A multilayer ceramic repair process which provides a new electrical repair path to connect top surface vias. The repair path is established between a defective net and a redundant repair net contained within the multilayer ceramic substrate. The defective net and the repair net each terminate at surface vias of the substrate. A laser is used to form post fired circuitry on and in the substrate. This is followed by the electrical isolation of the defective net from the electrical repair structure and passivation of the electrical repair line.
摘要:
Sealing a via using a soventless, low viscosity, high temperature stable polymer or a high solids content polymer solution of low viscosity, where the polymeric material is impregnated within the via at an elevated temperature. A supply chamber is introduced to administer the polymeric material at an elevated temperature, typically at a temperature high enough to liquefy the polymeric material. The polymeric material is introduced through heated supply lines under force from a pump, piston, or a vacuum held within said supply chamber.
摘要:
Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste or may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. a liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.
摘要:
A ceramic contact sheet and setter tile with controlled porosity is introduced, along with the method for making the same. The amount of porosity is controlled by the volume percentage, particle size, and particle shape of a fugitive phase which can be added to the original refractory material slurry used to fabricate setter tiles and contact sheets. The fugitive phase can be used independently to introduce porosity in setter tiles and contact sheets or in conjunction with partial densification. Since porosity is not solely dependent upon partial sintering, higher porosity levels can be achieved with less impact on subsequent mechanical properties of the resultant refractory material.
摘要:
A process for making multiple microelectronic ceramic substrates uses an interface layer between stacked layers of green sheets that are laminated with the interface layer, then fired to produce the ceramic substrates. The interface layer acts to protect the substrates, and to hold them together before firing, then thermally degrades at a desired point in the firing cycle to separate the individual substrates. The invention also includes the ceramic substrates produced by the method.
摘要:
Method for producing ceramic laminates from a plurality of greensheet layers which include one or more thin greensheet layers, e.g. having a thickness less than about 3 mils, with interposed patterned circuit layers and conductive vias, while avoiding the loss of strength and the distortion encountered when paste compositions are pre-applied to such thin greensheet layers. The invention avoids the aforementioned problems by the use of a plurality of greensheet layers including thicker, paste-resistant greensheet layers having a thickness greater than the thin greensheet layer, e.g., between 5 and 10 mils, each pair of the thicker greensheet layers confining therebetween an unscreened thin greensheet layer, one of the thicker greensheet layers also being screened with the circuit pattern layer normally applied to the interposed thin greensheet layer. Thereafter the superposed layers are laminated and sintered to form the composite.
摘要:
Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.
摘要:
A sintering process is described using a glass-ceramic slurry containing an alloy powder or flakes selected from a group of alloys consisting of:______________________________________ Fe--Cr Cu--Ti Fe--Cr--Ni Ag--Ti Cr--Al Nb--Al Ni--Cr Cu--Al Ni--Al Cu--Al--Cr Fe--Al ______________________________________ The slurry is molded and later is sintered in a steam atmosphere at a temperature of about 1000.degree. C. to yield a glass-ceramic substrate toughened against crack propagation and useful in the packaging of semi-conductor device chips.
摘要:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
摘要:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.