发明授权
- 专利标题： Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication
- 专利标题（中）： 基极GMR读头具有改进的硬偏置层及其制造方法
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申请号： US09822491申请日： 2001-04-02
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公开(公告)号： US07016165B2公开(公告)日： 2006-03-21
- 发明人: Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
- 申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
- 申请人地址： US CA Milpitas
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理商 George D. Saile; Stephen B. Ackerman
- 主分类号： G11B5/127
- IPC分类号： G11B5/127
摘要：
A method for forming a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region and a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region fabricated according to that method.
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