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US07016224B2 Two terminal silicon based negative differential resistance device 有权
两端硅基负差分电阻器件

  • 专利标题： Two terminal silicon based negative differential resistance device
  • 专利标题（中）： 两端硅基负差分电阻器件
  • 申请号： US10884576
    申请日： 2004-07-02
  • 公开(公告)号： US07016224B2
    公开(公告)日： 2006-03-21
  • 发明人: Tsu-Jae King
  • 申请人： Tsu-Jae King
  • 代理机构： Bever, Hoffman & Harms, LLP
  • 代理商 John M. Kubodera
  • 主分类号： G11C11/38
  • IPC分类号： G11C11/38
Two terminal silicon based negative differential resistance device
摘要：
A two terminal, silicon based negative differential resistance (NDR) element is disclosed, to effectuate a type of NDR diode for selected applications. The two terminal device is based on a three terminal NDR-capable FET which has a modified channel doping profile, and in which the gate is tied to the drain. This device can be integrated through conventional CMOS processing with other NDR and non-NDR elements, including NDR capable FETs. A memory cell using such NDR two terminal element and an NDR three terminal is also disclosed.
摘要（中）：

公开了一种双端子硅基负差动电阻（NDR）元件，以实现用于所选应用的一种NDR二极管。 两端子器件基于具有修改的沟道掺杂分布的三端NDR功能FET，其中栅极连接到漏极。 该器件可以通过常规CMOS处理与其他NDR和非NDR元件（包括具有NDR功能的FET）进行集成。 还公开了使用这种NDR两端元件和NDR三端的存储单元。

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