发明授权
US07018918B2 Method of forming a selectively converted inter-layer dielectric using a porogen material
失效
使用致孔剂材料形成选择性转化的层间电介质的方法
- 专利标题: Method of forming a selectively converted inter-layer dielectric using a porogen material
- 专利标题(中): 使用致孔剂材料形成选择性转化的层间电介质的方法
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申请号: US10701251申请日: 2003-11-03
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公开(公告)号: US07018918B2公开(公告)日: 2006-03-28
- 发明人: Grant M. Kloster , Kevin P. O'brien , Michael D. Goodner , Jihperng Leu , David H. Gracias , Lee D. Rockford , Peter K. Moon , Chris E. Barns
- 申请人: Grant M. Kloster , Kevin P. O'brien , Michael D. Goodner , Jihperng Leu , David H. Gracias , Lee D. Rockford , Peter K. Moon , Chris E. Barns
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理商 Michael D. Plimier
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/461 ; H01L21/469 ; H01L21/4763
摘要:
An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.
公开/授权文献
- US20040102032A1 Selectively converted inter-layer dielectric 公开/授权日:2004-05-27
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