发明授权
- 专利标题： Non-volatile memory and fabrication method thereof
- 专利标题（中）： 非易失性存储器及其制造方法
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申请号： US10716621申请日： 2003-11-20
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公开(公告)号： US07023014B2公开(公告)日： 2006-04-04
- 发明人: Kiyoshi Morimoto , Hideyuki Tanaka , Takashi Ohtsuka , Akihito Miyamoto
- 申请人： Kiyoshi Morimoto , Hideyuki Tanaka , Takashi Ohtsuka , Akihito Miyamoto
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2002-202487 20020711; WOPCT/JP03/08349 20030701
- 主分类号： H01L29/18
- IPC分类号： H01L29/18
摘要：
The present invention relates to a non-volatile memory comprising: a first electrode (11); a second electrode (12); and a phase-change recording medium (14) sandwiched between the first electrode (11) and the second electrode (12), in which resistance value is varied by applying an electrical pulse across the first electrode (11) and the second electrode (12), at least one of the first electrode (11) and the second electrode (12) contains as a main ingredient at least one member selected from the group consisting of ruthenium, rhodium and osmium, and the phase-change recording medium (14) is formed of a phase-change material that contains chalcogen(s). This non-volatile memory exhibits improved durability and reliability by preventing deterioration of property (i.e., mutual impurity diffusion between the electrode and the phase-change recording medium) caused by application of current.
公开/授权文献
- US20040109351A1 Non-volatile memory and fabrication method thereof 公开/授权日：2004-06-10