Invention Grant
- Patent Title: Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
- Patent Title (中): 发光半导体器件,发光系统和制造发光半导体器件的方法
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Application No.: US10469740Application Date: 2002-09-03
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Publication No.: US07023019B2Publication Date: 2006-04-04
- Inventor: Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
- Applicant: Toshihide Maeda , Shozo Oshio , Katsuaki Iwama , Hiromi Kitahara , Tadaaki Ikeda , Hidenori Kamei , Yasuyuki Hanada , Kei Sakanoue
- Applicant Address: JP Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2001-265540 20010903; JP2001-381368 20011214; JP2001-381369 20011214; JP2001-381370 20011214
- International Application: PCT/JP02/08959 WO 20020903
- International Announcement: WO03/021691 WO 20030313
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1−a1−b1−xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0
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