发明授权
- 专利标题： Trench capacitor vertical structure
- 专利标题（中）： 沟槽电容器垂直结构
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申请号： US10341187申请日： 2003-01-13
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公开(公告)号： US07023041B2公开(公告)日： 2006-04-04
- 发明人: Giuseppe La Rosa , Thomas W. Dyer , Oleg Gluschenkov , Jack A. Mandelman , Carl J. Radens , Alvin W. Strong
- 申请人： Giuseppe La Rosa , Thomas W. Dyer , Oleg Gluschenkov , Jack A. Mandelman , Carl J. Radens , Alvin W. Strong
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Eric W. Petraske
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/76
摘要：
A versatile structure is formed, based on a deep trench, vertical transistor DRAM cell, that forms a conductive extension of the trench electrode in an elongated trench that contacts the lower electrode of the vertical transistor. The structure can be used as a capacitor, as a discrete transistor as a single-transistor amplifier or as a building block for more complex circuits.
公开/授权文献
- US20040135188A1 Trench capacitor vertical structure 公开/授权日：2004-07-15
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