发明授权
- 专利标题： Undoped oxide liner/BPSG for improved data retention
- 专利标题（中）： 未掺杂氧化物衬垫/ BPSG，以改善数据保留
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申请号： US10617450申请日： 2003-07-11
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公开(公告)号： US07023046B2公开(公告)日： 2006-04-04
- 发明人: Minh Van Ngo , Angela Hui , Ning Cheng , Jeyong Park , Jean Yee-Mei Yang , Robert A. Huertas , Tazrien Kamal , Pei-Yuan Gao , Tyagamohan Gottipati
- 申请人： Minh Van Ngo , Angela Hui , Ning Cheng , Jeyong Park , Jean Yee-Mei Yang , Robert A. Huertas , Tazrien Kamal , Pei-Yuan Gao , Tyagamohan Gottipati
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
Semiconductor devices with improved data retention are formed by depositing an undoped oxide liner on spaced apart transistors followed by in situ deposition of a BPSG layer. Embodiments include depositing an undoped silicon oxide liner derived from TEOS, as at a thickness of 400 Å to 600 Å, on transistors of a non-volatile semiconductor device, as by sub-atmospheric chemical vapor deposition, followed by depositing the BPSG layer in the same deposition chamber.
公开/授权文献
- US20050006693A1 Undoped oxide liner/BPSG for improved data retention 公开/授权日：2005-01-13
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