Invention Grant
US07023743B2 Stacked columnar 1T-nMTJ structure and its method of formation and operation
有权
堆叠柱状1T-nMTJ结构及其形成和操作方法
- Patent Title: Stacked columnar 1T-nMTJ structure and its method of formation and operation
- Patent Title (中): 堆叠柱状1T-nMTJ结构及其形成和操作方法
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Application No.: US10784786Application Date: 2004-02-24
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Publication No.: US07023743B2Publication Date: 2006-04-04
- Inventor: Hasan Nejad , Mirmajid Seyyedy
- Applicant: Hasan Nejad , Mirmajid Seyyedy
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro Morin & Oshinsky LLP
- Main IPC: G11C11/15
- IPC: G11C11/15

Abstract:
This invention relates to an array architecture which incorporates certain advantages from both cross-point and 1T-1MTJ architectures during reading operations. The fast read-time and higher signal to noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point architecture are both exploited by using a single access transistor to control the reading of multiple stacked columns of cells each column being provided in a respective stacked memory layer.
Public/Granted literature
- US20040165421A1 Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operation Public/Granted day:2004-08-26
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