发明授权
- 专利标题: Method for fabricating semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US10861464申请日: 2004-06-07
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公开(公告)号: US07026261B2公开(公告)日: 2006-04-11
- 发明人: Yutaka Hirose , Tsuyoshi Tanaka , Daisuke Ueda
- 申请人: Yutaka Hirose , Tsuyoshi Tanaka , Daisuke Ueda
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2003-170301 20030616
- 主分类号: H01L21/26
- IPC分类号: H01L21/26
摘要:
A semiconductor layer formed on one surface of a substrate is irradiated with light from the other surface of the substrate to thermally decompose part of a region of the semiconductor layer in contact with the substrate, thereby forming a thermally decomposed layer. Thereafter, the thermally decomposed layer is removed with the substrate kept bonded with the semiconductor layer.
公开/授权文献
- US20050026393A1 Method for fabricating semiconductor device 公开/授权日:2005-02-03
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