发明授权
US07026715B2 Semiconductor device having wiring layer formed in wiring groove
失效
具有形成在布线槽中的布线层的半导体装置
- 专利标题： Semiconductor device having wiring layer formed in wiring groove
- 专利标题（中）： 具有形成在布线槽中的布线层的半导体装置
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申请号： US10628689申请日： 2003-07-28
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公开(公告)号： US07026715B2公开(公告)日： 2006-04-11
- 发明人: Noriaki Matsunaga , Kazuyuki Higashi
- 申请人： Noriaki Matsunaga , Kazuyuki Higashi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Frommer Lawrence & Haug LLP
- 优先权： JP2003-003290 20030109
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A semiconductor device is disclosed, which comprises a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate, the interlayer insulating film comprising a first insulating film and a second insulating film formed on the first insulating film, the first insulating film comprising a silicon oxide film containing carbon of a concentration, the second insulating film comprising a silicon oxide film containing carbon of a concentration lower than the concentration of the first insulating film or comprising a silicon oxide film containing substantially no carbon, a via contact made of a metal material embedded in a via hole formed in the interlayer insulating film, a diameter of the via hole in the first insulating film being smaller than that in the second insulating film at an interface between the first insulating film and the second insulating film.
公开/授权文献
- US20040135255A1 Semiconductor device and its manufacturing method 公开/授权日：2004-07-15
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