发明授权
US07029376B1 Process of fabricating write pole in magnetic recording head using rhodium CMP stop layer
失效
使用铑CMP停止层在磁记录头中制造写柱的过程
- 专利标题: Process of fabricating write pole in magnetic recording head using rhodium CMP stop layer
- 专利标题(中): 使用铑CMP停止层在磁记录头中制造写柱的过程
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申请号: US11225907申请日: 2005-09-14
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公开(公告)号: US07029376B1公开(公告)日: 2006-04-18
- 发明人: Hung-Chin Guthrie , Ming Jiang , Jyh-Shuey Lo , Hong Zhang
- 申请人: Hung-Chin Guthrie , Ming Jiang , Jyh-Shuey Lo , Hong Zhang
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Silicon Valley Patent Group LLP
- 主分类号: G11B5/127
- IPC分类号: G11B5/127
摘要:
In the formation of the top magnetic write pole in a thin film magnetic recording head, a CMP stop layer comprising rhodium is deposited over the Al2O3 layer that overlies the top magnetic pole. A mixture of silicon dioxide, ammonium persulfate and benzotriazole is employed as a slurry in the CMP process that removes the portion of the Al2O3 layer covering the top magnetic pole. This eliminates the need for an extra thick layer of Al2O3 to be first deposited over the top pole and then removed to expose the top pole. The magnetic layer that forms the top pole can be plated to the target thickness of the top pole. As a result, the thickness of the photoresist layer that is used to define the size and shape of the top pole can be decreased to a desirable thickness, facilitating the use of DUV radiation to expose the photoresist layer.
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