公开(公告)号：US08503131B2

公开(公告)日：2013-08-06

申请号：US13339310

申请日：2011-12-28

申请人： Yi Zheng ,  Yimin Hsu ,  Wen-Chien David Hsiao ,  Ming Jiang ,  Aron Pentek ,  Sue Siyang Zhang ,  Edward Hin Pong Lee ,  Hung-chin Guthrie ,  Ning Shi ,  Vladimir Nikitin ,  Prabodh Ratnaparkhi ,  Yinshi Liu

发明人： Yi Zheng ,  Yimin Hsu ,  Wen-Chien David Hsiao ,  Ming Jiang ,  Aron Pentek ,  Sue Siyang Zhang ,  Edward Hin Pong Lee ,  Hung-chin Guthrie ,  Ning Shi ,  Vladimir Nikitin ,  Prabodh Ratnaparkhi ,  Yinshi Liu

IPC分类号： G11B5/147

CPC分类号： G11B5/3166 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T428/11 ,  Y10T428/1186

摘要： A magnetic write head for perpendicular magnetic data recording. The write head includes a substrate and a magnetic write pole formed on the substrate, the write pole having a trailing edge and first and second sides. A magnetic stitched pole is formed over a portion of the magnetic write pole, the stitched pole having a front edge that defines a secondary flare point. First and second non-magnetic side walls are formed at the first and second sides of the write pole. The non-magnetic side walls extend from the substrate at least to the trailing edge of the write pole in a first region near an air bearing surface and wherein the first and second non-magnetic side walls extend from the substrate to a point between the substrate and the trailing edge, allowing the stitched magnetic pole to extend partially over the sides of the write pole.

摘要翻译： 用于垂直磁数据记录的磁写头。 写入头包括形成在衬底上的衬底和磁性写入磁极，写入极具有后缘和第一和第二侧。 在磁性写入磁极的一部分上形成有磁性的缝合磁极，缝合的磁极具有限定二次闪光点的前部边缘。 第一和第二非磁性侧壁形成在写入极的第一和第二侧。 所述非磁性侧壁在靠近空气支承表面的第一区域中从所述基板至少延伸到所述写柱的后缘，并且其中所述第一和第二非磁性侧壁从所述基板延伸到所述基板之间的点 和后缘，允许缝合的磁极部分地延伸在写柱的侧面上。

公开(公告)号：US07804662B2

公开(公告)日：2010-09-28

申请号：US11645390

申请日：2006-12-26

申请人： Tsung Yuan Chen ,  Hung-Chin Guthrie ,  Yimin Hsu ,  Ming Jiang

发明人： Tsung Yuan Chen ,  Hung-Chin Guthrie ,  Yimin Hsu ,  Ming Jiang

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

摘要： In a perpendicular recording head, a notch is formed in the top write gap at a location on top of the main pole. A perpendicular head with this notched top write gap structure has less transition curvature and better writability while reducing the adjacent track interference (ATI). Also, the process used to fabricate the head ensures that the trailing edge (writing edge) of the main pole is extremely flat with no corner rounding.

摘要翻译： 在垂直记录头中，在主极顶部的位置处，在顶部写入间隙中形成凹口。 具有该切口顶部写入间隙结构的垂直头部具有较小的转变曲率和较好的可编写性，同时减小了相邻的轨道干涉（ATI）。 此外，用于制造头的过程确保主极的后缘（书写边缘）非常平坦，没有圆角。

公开(公告)号：US07722436B2

公开(公告)日：2010-05-25

申请号：US11832455

申请日：2007-08-01

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

IPC分类号： B24B49/00

CPC分类号： B24B49/03 ,  B24B37/042

摘要： During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.

摘要翻译： 在晶片的平坦化期间，在通过化学机械抛光对晶片进行平面化之后，在多个位置测量晶片层的厚度。 厚度测量用于自动确定从测量结合到的中心到边缘轮廓模型，控制称为“后侧压力”的化学机械抛光的参数。背面压力在一些实施例中通过基于 中心到边缘轮廓模型，模型的确定系数R平方和背侧压力的当前值。 注意，仅当对模型的测量的拟合良好时才调整“背侧压力”设定点。 如R平方所示大于预定极限。 接下来，将从模型确定的背面压力用于平面化后续晶片。

公开(公告)号：US07551397B2

公开(公告)日：2009-06-23

申请号：US11218701

申请日：2005-09-02

申请人： Bin V. Cao ,  Hung-Chin Guthrie ,  Wen-Chien Hsiao ,  Jyh-Shuey Lo

发明人： Bin V. Cao ,  Hung-Chin Guthrie ,  Wen-Chien Hsiao ,  Jyh-Shuey Lo

IPC分类号： G11B5/187

CPC分类号： G11B5/3116 ,  G11B5/3163

摘要： A magnetic write head and method of manufacture thereof that has a first pole structure having a step notched first pole structure. The step notched structure includes a bottom notched portion that is wider than the second notched portion formed thereover. The upper, or narrower, notched portion has a width that is substantially equal to and self aligned with a second pole structure (P2) formed thereover. The invention may also include first and second wing portions formed in the first pole that are recessed from the ABS and that extend laterally from the first notched portions of the first pole. The formation of the winged portions is assisted by an ion mill resistant bump (alumina bump) formed thereover, which acts as a mask during the ion milling operations that are used to form the first and second notches.

摘要翻译： 一种磁写头及其制造方法，其具有第一极结构，具有阶切口第一极结构。 台阶缺口结构包括比形成在其上的第二切口部分更宽的底部切口部分。 上部或更窄的切口部分具有与形成在其上的第二极结构（P2）基本相等并自对准的宽度。 本发明还可以包括形成在第一极中的从ABS凹入并从第一极的第一切口部横向延伸的第一和第二翼部。 翼形部分的形成由在其上形成的离子磨耐磨凸起（氧化铝凸块）辅助，其在用于形成第一和第二凹口的离子铣削操作期间用作掩模。

公开(公告)号：US07514016B2

公开(公告)日：2009-04-07

申请号：US10903833

申请日：2004-07-30

申请人： Hung-Chin Guthrie ,  Ming Jiang

发明人： Hung-Chin Guthrie ,  Ming Jiang

IPC分类号： B24B1/00 ,  H01L21/00

CPC分类号： C03C15/00 ,  C03C19/00 ,  G11B5/8404

摘要： A chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession and trailing edge profile variation, and smooth surface finish with minimal smearing across multi-layers of thin films and the hard substrate to meet the requirements of high areal density thin film magnetic heads for hard disk drives (HDD). With a fine chemical mechanical nanogrinding process, PTR can be improved to a mean of about 0.5 nm.

摘要翻译： 化学 - 机械纳米研磨工艺实现近零极点尖端衰退（PTR），以最小化头部换能器的磁空间损失，使介质间隔损耗，氧化铝凹陷和后缘轮廓变化最小化，并且平滑表面光洁度，同时具有跨多层 薄膜和硬质基板，以满足硬盘驱动器（HDD）的高密度薄膜磁头的要求。 通过精细的化学机械纳米研磨工艺，PTR可以提高到约0.5nm的平均值。

公开(公告)号：US20080274623A1

公开(公告)日：2008-11-06

申请号：US11743404

申请日：2007-05-02

申请人： Hung-Chin Guthrie ,  Ying Hong ,  Ming Jiang

发明人： Hung-Chin Guthrie ,  Ying Hong ,  Ming Jiang

IPC分类号： H01L21/302

CPC分类号： G11B5/3163 ,  G11B5/3169

摘要： Methods for fabricating TMR and CPP GMR magnetic heads using a chemical mechanical polishing (CMP) process with a patterned CMP conductive protective layer for sensor stripe height patterning. The method comprises defining a stripe height of a read sensor of a magnetic head reader. The method further comprises refill depositing an insulator layer on the read sensor. The method further comprises performing a CMP process down to the conductive protective layer on the read sensor deposited while defining the read sensor to remove an overfill portion of the insulator layer above the conductive protective layer and to remove a sensor pattern masking structure on the conductive protective layer. As a result, the insulator layer is planarized and smooth with the read sensor, eliminating fencing and alumina bumps typically encountered in the insulator layer at the edge of the patterned sensor.

摘要翻译： 使用化学机械抛光（CMP）工艺制造TMR和CPP GMR磁头的方法，具有用于传感器条纹高度图案化的图案化CMP导电保护层。 该方法包括定义磁头读取器的读取传感器的条带高度。 该方法还包括在读取的传感器上填充沉积绝缘体层。 该方法还包括在限定读取的传感器的同时，在读取的传感器上执行CMP处理，以去除传感器保护层上方的绝缘体层的过度填充部分，并且去除导电保护层上的传感器图案掩蔽结构 层。 结果，绝缘体层与读取传感器平坦化并且平滑，消除了在图案化传感器的边缘处的绝缘体层中通常遇到的栅栏和氧化铝凸块。

公开(公告)号：US20080113514A1

公开(公告)日：2008-05-15

申请号：US11595654

申请日：2006-11-10

申请人： Amanda Baer ,  Hung-chin Guthrie ,  Yimin Hsu ,  Ming Jiang ,  Aron Pentek

发明人： Amanda Baer ,  Hung-chin Guthrie ,  Yimin Hsu ,  Ming Jiang ,  Aron Pentek

IPC分类号： H01L21/311

CPC分类号： G11B5/1278 ,  G11B5/112 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Methods for improving within wafer and wafer to wafer yields during fabrication of notched trailing shield structures are disclosed. Ta/Rh CMP stop layers are deposited prior to planarization and notch formation to ensure a planar surface for trailing shield structures. These stop layers may be blanket deposited or patterened prior to CMP. Patterned stop layers produce the highest yields.

摘要翻译： 公开了在制造缺口尾部屏蔽结构期间在晶片和晶片之间改善晶片产量的方法。 在平坦化和切口形成之前沉积Ta / Rh CMP停止层以确保用于尾部屏蔽结构的平坦表面。 这些停止层可以在CMP之前被铺平或沉积。 图案化的停止层产生最高的产量。

公开(公告)号：US20070258167A1

公开(公告)日：2007-11-08

申请号：US11411556

申请日：2006-04-25

申请人： Donald Allen ,  Amanda Baer ,  Michael Feldbaum ,  Hung-Chin Guthrie ,  Wen-Chien Hsiao ,  Yimin Hsu ,  Ming Jiang ,  Yinshi Liu ,  Aron Neuhaus ,  Vladimir Nikitin ,  Aron Pentek ,  Katalin Pentek ,  Yi Zheng

发明人： Donald Allen ,  Amanda Baer ,  Michael Feldbaum ,  Hung-Chin Guthrie ,  Wen-Chien Hsiao ,  Yimin Hsu ,  Ming Jiang ,  Yinshi Liu ,  Aron Neuhaus ,  Vladimir Nikitin ,  Aron Pentek ,  Katalin Pentek ,  Yi Zheng

IPC分类号： G11B5/147

CPC分类号： G11B5/3116 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/3146 ,  G11B5/315 ,  G11B5/3163

摘要： A magnetic write head for perpendicular magnetic recording having a write pole with a concave trailing edge. The magnetic write pole can have a trapezoidal shape with first and second laterally opposed sides that are further apart at the trailing edge than at the leading edge. The write head may or may not include a magnetic trailing shield, and if a trailing shield is included it is separated from the trailing edge by a non-magnetic write gap layer. The concave trailing edge improves magnetic performance such as by improving the transition curvature. A method for constructing the write head includes forming a magnetic write pole by forming a mask structure over a deposited write pole material, the mask structure having an alumina hard mask and an image transfer layer such as DURAMIDE®. An alumina fill layer is then deposited and a chemical mechanical polish is performed to open up the image transfer layer. A reactive on etch is performed to remove the image transfer layer and a reactive ion mill or reactive ion etch is performed to remove the alumina hard mask and form a concave surface on the write pole.

摘要翻译： 用于垂直磁记录的磁写头，具有带有凹后缘的写极。 磁性写入极可以具有梯形形状，其中第一和第二横向相对侧在后缘处比在前缘处更远地分开。 写头可以包括或可以不包括磁性后屏蔽，并且如果包括后屏蔽，则其通过非磁性写间隙层与后缘分离。 凹形后边缘提高磁性能，例如通过改善转变曲率。 构成写入头的方法包括通过在沉积的写入极材料上形成掩模结构来形成磁性写入极，掩模结构具有氧化铝硬掩模和诸如DURAMIDE的图像转移层。 然后沉积氧化铝填充层，并执行化学机械抛光以打开图像转印层。 执行反应性蚀刻以去除图像转印层，并且执行反应性离子磨或反应离子蚀刻以除去氧化铝硬掩模并在写入极上形成凹面。

公开(公告)号：US07279424B2

公开(公告)日：2007-10-09

申请号：US10928002

申请日：2004-08-27

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Hong Zhang

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Hong Zhang

IPC分类号： H01L21/302

CPC分类号： B82Y25/00 ,  G11B5/3163 ,  G11B5/3169

摘要： A method is described for thin film processing using a selected CMP slurry with a silicon dioxide stop layer. The slurry includes an abrasive, preferably alumina, a corrosion inhibitor, preferably benzotriazole (BTA), and an oxidizer preferably hydrogen peroxide. The method is particularly useful for fabricating thin film heads where alumina is used as the dielectric. The method can be used to planarize metal structures surrounded by alumina in magnetic heads. The alumina refill is deposited to the final target height which is slightly below the height of the metal. A thin silicon dioxide stop layer is deposited over the alumina. The CMP is executed using the selected slurry to planarize the wafer down to the stop layer. Preferably only a negligible amount of the stop layer remains and the height of the metal structure is essentially the same as the deposited height of the refilled alumina.

摘要翻译： 描述了使用具有二氧化硅停止层的所选CMP浆料进行薄膜处理的方法。 浆料包括研磨剂，优选氧化铝，腐蚀抑制剂，优选苯并三唑（BTA）和优选过氧化氢的氧化剂。 该方法对于制造其中使用氧化铝作为电介质的薄膜头特别有用。 该方法可用于平面化由磁头中的氧化铝包围的金属结构。 氧化铝填充物沉积到稍低于金属高度的最终目标高度。 在氧化铝上沉积薄的二氧化硅阻挡层。 使用所选择的浆料执行CMP以将晶片平坦化到停止层。 优选地，仅剩下可忽略量的止挡层，并且金属结构的高度与再填充氧化铝的沉积高度基本相同。

公开(公告)号：US07220167B2

公开(公告)日：2007-05-22

申请号：US11034340

申请日：2005-01-11

申请人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Ming Jiang ,  John Jaekoyun Yang

发明人： Jian-Huei Feng ,  Hung-Chin Guthrie ,  Ming Jiang ,  John Jaekoyun Yang

IPC分类号： B24B1/00

CPC分类号： B24B37/24 ,  B24B37/042 ,  B24B49/16

摘要： A method for chemical mechanical polishing (CMP) wafers having high aspect ratio surface topography. A wafer is positioned on a plate. A polishing pad is coupled to a platen. A polishing solution (e.g., slurry) is added between the polishing pad and the wafer. CMP is performed on the wafer by creating a relative movement between the polishing pad and the wafer. The polishing pad removes substantially all residual material from the channels. To accomplish this, the polishing pad has a compressibility of at least 5% at a polishing pressure of about 4 psi.

摘要翻译： 一种具有高纵横比表面形貌的化学机械抛光（CMP）晶片的方法。 晶片位于板上。 抛光垫联接到压板。 在抛光垫和晶片之间添加抛光溶液（例如浆料）。 通过在抛光垫和晶片之间产生相对移动来在晶片上执行CMP。 抛光垫基本上从通道中去除所有残留的材料。 为了实现这一点，抛光垫在约4psi的抛光压力下具有至少5％的压缩率。