发明授权
US07030040B2 Selectively growing a polymeric material on a semiconductor substrate
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在半导体衬底上选择性地生长聚合材料
- 专利标题： Selectively growing a polymeric material on a semiconductor substrate
- 专利标题（中）： 在半导体衬底上选择性地生长聚合材料
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申请号： US10284722申请日： 2002-10-31
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公开(公告)号： US07030040B2公开(公告)日： 2006-04-18
- 发明人: Michael D. Goodner , Grant Kloster
- 申请人： Michael D. Goodner , Grant Kloster
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A surface may be selectively coated with a polymer using an induced surface grafting or polymerization reaction. The reaction proceeds in those regions that are polymerizable and not in other regions. Thus, a semiconductor structure having organic regions and metal regions exposed, for example, may have the organic polymers formed selectively on the organic regions and not on the unpolymerizable or metal regions.
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