发明授权
- 专利标题: Long wavelength VCSEL device processing
- 专利标题(中): 长波长VCSEL器件处理
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申请号: US10697660申请日: 2003-10-29
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公开(公告)号: US07031363B2公开(公告)日: 2006-04-18
- 发明人: James R. Biard , Klein L. Johnson , Ralph H. Johnson , Gyoungwon Park , Tzu-Yu Wang
- 申请人: James R. Biard , Klein L. Johnson , Ralph H. Johnson , Gyoungwon Park , Tzu-Yu Wang
- 申请人地址: US CA Sunnyvale
- 专利权人: Finisar Corporation
- 当前专利权人: Finisar Corporation
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Workman Nydegger
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contacts, thick and thin pad dielectric, air bridges and wafer thinning.
公开/授权文献
- US20050092710A1 Long wavelength VCSEL device processing 公开/授权日:2005-05-05