- 专利标题: Light emitting device and method of manufacturing the same
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申请号: US11060763申请日: 2005-02-18
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公开(公告)号: US07033848B2公开(公告)日: 2006-04-25
- 发明人: Satoshi Murakami , Toru Takayama , Kengo Akimoto
- 申请人: Satoshi Murakami , Toru Takayama , Kengo Akimoto
- 申请人地址: JP Atsugi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2001-398624 20011227
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/461
摘要:
A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.
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