公开(公告)号：US07492012B2

公开(公告)日：2009-02-17

申请号：US11276651

申请日：2006-03-09

申请人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

发明人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L23/62

CPC分类号： H01L27/124 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5253

摘要： A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.

摘要翻译： 提供了一种发光器件，其具有用于防止由TFT和发光元件之间形成的层间绝缘膜中包含的水和氧引起的发光元件劣化的结构。 在基板上形成TFT，在TFT上由无机材料形成无机绝缘膜，作为第一绝缘膜，在有机绝缘膜上形成有机绝缘膜，作为第二绝缘膜 膜和无机绝缘膜由无机材料形成在第二绝缘膜上并用作第三绝缘膜。 由此获得的是用于防止第二绝缘膜释放水分和氧气的结构。 为了避免形成膜的缺陷，单独除去形成有接触孔的第三绝缘膜的一部分。 然后，在第三绝缘膜上形成由阳极，有机化合物层和阴极构成的发光元件。 本申请的发光器件中的TFT和发光元件通过形成在接触孔中的线彼此连接。

公开(公告)号：US07033848B2

公开(公告)日：2006-04-25

申请号：US11060763

申请日：2005-02-18

申请人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

发明人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L21/00 ,  H01L21/461

CPC分类号： H01L27/124 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5253

摘要： A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.

公开(公告)号：US20050156172A1

公开(公告)日：2005-07-21

申请号：US11060763

申请日：2005-02-18

申请人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

发明人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

IPC分类号： H05B33/04 ,  G09F9/30 ,  H01L21/318 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H01L29/15

CPC分类号： H01L27/124 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5253

摘要： A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.

公开(公告)号：US06861710B2

公开(公告)日：2005-03-01

申请号：US10329953

申请日：2002-12-27

申请人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

发明人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

IPC分类号： H05B33/04 ,  G09F9/30 ,  H01L21/318 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H01K23/62

CPC分类号： H01L27/124 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5253

摘要： A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.

摘要翻译： 提供了一种发光器件，其具有用于防止由TFT和发光元件之间形成的层间绝缘膜中包含的水和氧引起的发光元件劣化的结构。 在基板上形成TFT，在TFT上由无机材料形成无机绝缘膜，作为第一绝缘膜，在有机绝缘膜上形成有机绝缘膜，作为第二绝缘膜 膜和无机绝缘膜由无机材料形成在第二绝缘膜上并用作第三绝缘膜。 由此获得的是用于防止第二绝缘膜释放水分和氧气的结构。 为了避免形成膜的缺陷，单独除去形成有接触孔的第三绝缘膜的一部分。 然后，在第三绝缘膜上形成由阳极，有机化合物层和阴极构成的发光元件。 本申请的发光器件中的TFT和发光元件通过形成在接触孔中的线彼此连接。

公开(公告)号：US20060151789A1

公开(公告)日：2006-07-13

申请号：US11276651

申请日：2006-03-09

申请人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

发明人： Satoshi Murakami ,  Toru Takayama ,  Kengo Akimoto

IPC分类号： H01L29/04

CPC分类号： H01L27/124 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5253

摘要： A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole.

摘要翻译： 提供了一种发光器件，其具有用于防止由TFT和发光元件之间形成的层间绝缘膜中包含的水和氧引起的发光元件劣化的结构。 在基板上形成TFT，在TFT上由无机材料形成无机绝缘膜，作为第一绝缘膜，在有机绝缘膜上形成有机绝缘膜，作为第二绝缘膜 膜和无机绝缘膜由无机材料形成在第二绝缘膜上并用作第三绝缘膜。 由此获得的是用于防止第二绝缘膜释放水分和氧气的结构。 为了避免形成膜的缺陷，单独除去形成有接触孔的第三绝缘膜的一部分。 然后，在第三绝缘膜上形成由阳极，有机化合物层和阴极构成的发光元件。 本申请的发光器件中的TFT和发光元件通过形成在接触孔中的线彼此连接。

公开(公告)号：US07417249B2

公开(公告)日：2008-08-26

申请号：US11202313

申请日：2005-08-12

申请人： Kengo Akimoto ,  Satoshi Murakami

发明人： Kengo Akimoto ,  Satoshi Murakami

IPC分类号： H01L31/036

CPC分类号： H01L27/1288 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L27/124 ,  H01L29/458

摘要： According to the present invention, wirings, electrodes or the like formed from two films (an ITO film and an aluminum film) which are incompatible with each other are connected, and low power consumption is realized even if a display screen size is increased in an active matrix display device. A three-layer structure or a two-layer structure is employed to obtain a favorable ohmic contact with ITO. The structure of a wiring or an electrode includes a layer having an aluminum carbon alloy which does not react with ITO. The wiring or an electrode is contacted with ITO.

摘要翻译： 根据本发明，由两个彼此不兼容的膜（ITO膜和铝膜）形成的布线，电极等连接，即使在显示屏尺寸增加的情况下也实现了低功耗 有源矩阵显示设备。 采用三层结构或双层结构来获得与ITO的良好欧姆接触。 布线或电极的结构包括具有不与ITO反应的铝碳合金的层。 接线或电极与ITO接触。

公开(公告)号：US07411215B2

公开(公告)日：2008-08-12

申请号：US10412234

申请日：2003-04-14

申请人： Masahiko Hayakawa ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Kengo Akimoto

发明人： Masahiko Hayakawa ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC分类号： H01L31/036

CPC分类号： H01L33/44 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

摘要： To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.

摘要翻译： 为了实现显示装置的操作功能的稳定性和电路设计中的设计余量的增加，在包括具有半导体元件的像素部分和设置有与基板上的半导体元件连接的像素电极的多个像素的显示装置中， 半导体元件包括作为层间绝缘膜的光敏有机树脂膜，设置在感光性有机树脂膜上的第一开口部的内壁面由第二绝缘氮化物膜覆盖，设置在无机绝缘膜上的第二开口部 设置在第一开口部的内侧，半导体和布线通过第一开口部和第二开口部连接，并且像素电极设置在活化层的下侧的层。

公开(公告)号：US20060038176A1

公开(公告)日：2006-02-23

申请号：US11202313

申请日：2005-08-12

申请人： Kengo Akimoto ,  Satoshi Murakami

发明人： Kengo Akimoto ,  Satoshi Murakami

IPC分类号： H01L31/036 ,  H01L21/00

CPC分类号： H01L27/1288 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L27/124 ,  H01L29/458

摘要： According to the present invention, wirings, electrodes or the like formed from two films (an ITO film and an aluminum film) which are incompatible with each other are connected, and low power consumption is realized even if a display screen size is increased in an active matrix display device. A three-layer structure or a two-layer structure is employed to obtain a favorable ohmic contact with ITO. The structure of a wiring or an electrode includes a layer having an aluminum carbon alloy which does not react with ITO. The wiring or an electrode is contacted with ITO.

摘要翻译： 根据本发明，由两个彼此不兼容的膜（ITO膜和铝膜）形成的布线，电极等连接，即使在显示屏尺寸增加的情况下也实现了低功耗 有源矩阵显示设备。 采用三层结构或双层结构来获得与ITO的良好欧姆接触。 布线或电极的结构包括具有不与ITO反应的铝碳合金的层。 接线或电极与ITO接触。

公开(公告)号：US08368072B2

公开(公告)日：2013-02-05

申请号：US12183330

申请日：2008-07-31

申请人： Masahiko Hayakawa ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Kengo Akimoto

发明人： Masahiko Hayakawa ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC分类号： H01L29/04

CPC分类号： H01L33/44 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/78621 ,  H01L2924/0002 ,  H01L2924/00

摘要： To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.

公开(公告)号：US09366930B2

公开(公告)日：2016-06-14

申请号：US13367805

申请日：2012-02-07

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Satoshi Murakami ,  Hajime Kimura

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Satoshi Murakami ,  Hajime Kimura

IPC分类号： H01L29/04 ,  H01L27/01 ,  H01L23/58 ,  G02F1/1368 ,  H01L27/32 ,  H01L51/52 ,  H05B33/04 ,  G02F1/1333 ,  G02F1/1362

CPC分类号： G02F1/1368 ,  G02F1/133305 ,  G02F1/136277 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3265 ,  H01L51/5237 ,  H01L2251/5315 ,  H05B33/04

摘要： A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

摘要翻译： 提供一种用于防止发光装置的劣化并保留每个像素所需的足够的电容器元件（电容器）的结构。 依次层叠第一钝化膜，第二金属层，平坦化膜，阻挡膜和第三金属层。 设置有平坦化膜的第一开口的侧面由阻挡膜覆盖，第一开口内部形成第二开口，第三金属层经由第一开口和第二开口连接到半导体。 提供了由晶体管，栅极绝缘膜，栅电极，第一钝化膜和第二金属层的半导体层叠形成的电容器元件。