发明授权
- 专利标题： Surface acoustic wave device
- 专利标题（中）： 表面声波装置
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申请号： US10270207申请日： 2002-10-12
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公开(公告)号： US07034433B2公开(公告)日： 2006-04-25
- 发明人: Michio Kadota , Takeshi Nakao , Masakazu Mimura
- 申请人： Michio Kadota , Takeshi Nakao , Masakazu Mimura
- 申请人地址： JP Kyoto
- 专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人地址： JP Kyoto
- 代理机构： Keating & Bennett, LL
- 优先权： JP2001-315181 20011012; JP2002-291991 20021004
- 主分类号： H01L41/08
- IPC分类号： H01L41/08
摘要：
A surface acoustic wave device has a high electromechanical coefficient and reflection coefficient, and also has an improved frequency-temperature characteristic that is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.
公开/授权文献
- US20030151329A1 Surface acoustic wave device 公开/授权日：2003-08-14
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