- 专利标题: Semiconductor integrated circuit for high frequency power amplifier, electronic component for high frequency power amplifier, and radio communication system
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申请号: US10811388申请日: 2004-03-29
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公开(公告)号: US07034617B2公开(公告)日: 2006-04-25
- 发明人: Kyoichi Takahashi , Shinji Yamada , Masashi Maruyama
- 申请人: Kyoichi Takahashi , Shinji Yamada , Masashi Maruyama
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- 优先权: JP2003-116789 20030422
- 主分类号: H03G3/30
- IPC分类号: H03G3/30
摘要:
In a radio communication system, an electronic component for high frequency power amplifier carries out the detection of output level, required for feedback control of the output power of a high frequency power amplification circuit, by current detection. The electronic component has an error amplifier. The error amplifier compares an output level detection signal with an output level instruction signal, and generates a signal for controlling the gain of the high frequency power amplification circuit according to the difference between them. For the error amplifier, a low-pass amplification circuit is used. The amplification circuit is provided with, between its output terminal and its inverting input terminal, a phase compensation circuit. The phase compensation circuit comprises a resistance element, and another resistance element and a capacitive element in series connected in parallel with the resistance element.