发明授权
US07037174B2 Methods for reducing delamination during chemical mechanical polishing
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在化学机械抛光过程中减少分层的方法
- 专利标题: Methods for reducing delamination during chemical mechanical polishing
- 专利标题(中): 在化学机械抛光过程中减少分层的方法
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申请号: US10678906申请日: 2003-10-03
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公开(公告)号: US07037174B2公开(公告)日: 2006-05-02
- 发明人: Yufei Chen , Lizhong Sun , Doohan Lee , Wei-Yung Hsu
- 申请人: Yufei Chen , Lizhong Sun , Doohan Lee , Wei-Yung Hsu
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Moser, Patterson & Sheridan
- 主分类号: B49D1/00
- IPC分类号: B49D1/00
摘要:
Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.
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