Invention Grant
US07037813B2 Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
失效
使用具有低解离和低最小等离子体电压的电容耦合等离子体源的等离子体浸没离子注入工艺
- Patent Title: Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
- Patent Title (中): 使用具有低解离和低最小等离子体电压的电容耦合等离子体源的等离子体浸没离子注入工艺
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Application No.: US10646612Application Date: 2003-08-22
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Publication No.: US07037813B2Publication Date: 2006-05-02
- Inventor: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
- Applicant: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Law Office of Robert M. Wallace
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L21/84
Abstract:
A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas including the species to be implanted in the surface layer of the workpiece. The method includes generating from the process gas a plasma by capacitively coupling RF source power across the workpiece support and the ceiling or the sidewall from an RF source power generator. The method further includes applying an RF bias from an RF bias generator to the workpiece support.
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