发明授权
- 专利标题： Single mask control of doping levels
- 专利标题（中）： 单掩模控制掺杂水平
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申请号： US10683858申请日： 2003-10-10
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公开(公告)号： US07037814B1公开(公告)日： 2006-05-02
- 发明人: Vladislav Vashchenko , Andy Strachan , Peter J. Hopper , Philipp Lindorfer
- 申请人： Vladislav Vashchenko , Andy Strachan , Peter J. Hopper , Philipp Lindorfer
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Jurgen Vollrath
- 主分类号： H01L21/22
- IPC分类号： H01L21/22 ; H01L21/38
摘要：
In an integrated circuit, dopant concentration levels are adjusted by making use of a perforated mask. Doping levels for different regions across an integrated circuit can be differently defined by making use of varying size and spacings to the perforations in the mask. The diffusion of dopant is completed by making use of an annealing stage.
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