发明授权
US07037823B2 Method to reduce silanol and improve barrier properties in low k dielectric ic interconnects
有权
在低k电介质互连中减少硅烷醇并改善阻隔性能的方法
- 专利标题： Method to reduce silanol and improve barrier properties in low k dielectric ic interconnects
- 专利标题（中）： 在低k电介质互连中减少硅烷醇并改善阻隔性能的方法
-
申请号： US10901708申请日： 2004-07-27
-
公开(公告)号： US07037823B2公开(公告)日： 2006-05-02
- 发明人: Phillip D. Matz , Sameer Ajmera , Changming Jin , Trace Q. Hurd
- 申请人： Phillip D. Matz , Sameer Ajmera , Changming Jin , Trace Q. Hurd
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Peter K. McLarty; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A trench and via structure is formed in a low k dielectric layer (100) formed over a silicon substrate (10). Super critical CO2 and a first silylization agent are used to form a chemically bonded high density surface layer (160). Silanol species are removed from the low k dielectric layer (100) using super critical CO2 and a second silylization agent. A barrier layer (190) and copper (200) are used to fill the trench and via structure.
公开/授权文献
信息查询
IPC分类:
