发明授权
- 专利标题： Method of fabricating a low-defect strained epitaxial germanium film on silicon
- 专利标题（中）： 在硅上制造低缺陷应变外延锗膜的方法
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申请号： US11149883申请日： 2005-06-10
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公开(公告)号： US07037856B1公开(公告)日： 2006-05-02
- 发明人: Jer-Shen Maa , Douglas J. Tweet , Jong-Jan Lee , Sheng Teng Hsu
- 申请人： Jer-Shen Maa , Douglas J. Tweet , Jong-Jan Lee , Sheng Teng Hsu
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理商 Robert D. Varitz, PC
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method of fabricating a germanium film on a silicon substrate includes preparing a silicon substrate; depositing a first germanium film to form a continuous germanium film on the silicon substrate; annealing the silicon substrate and the germanium film thereon in a first annealing process to relax the germanium film; depositing a second germanium film on the first germanium film to form a germanium layer; patterning and etching the germanium layer; depositing a layer of dielectric material on the germanium layer; cyclic annealing the silicon substrate having the germanium layer and dielectric material thereon; and completing a device containing the silicon substrate and germanium layer.
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