发明授权
US07041538B2 Method of manufacturing a disposable reversed spacer process for high performance recessed channel CMOS
失效
制造用于高性能凹陷通道CMOS的一次性反向间隔器工艺的方法
- 专利标题： Method of manufacturing a disposable reversed spacer process for high performance recessed channel CMOS
- 专利标题（中）： 制造用于高性能凹陷通道CMOS的一次性反向间隔器工艺的方法
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申请号： US10713971申请日： 2003-11-14
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公开(公告)号： US07041538B2公开(公告)日： 2006-05-09
- 发明人: Meikei Ieong , Omer H. Dokumaci , Thomas S. Kanarsky , Victor Ku
- 申请人： Meikei Ieong , Omer H. Dokumaci , Thomas S. Kanarsky , Victor Ku
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy, & Presser, P.C.
- 代理商 Joseph P. Abate
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A high-performance recessed channel CMOS device including an SOI layer having a recessed channel region and adjoining extension implant regions and optional halo implant regions; and at least one gate region present atop the SOI layer and a method for fabricating the same are provided. The adjoining extension and optional halo implant regions have an abrupt lateral profile and are located beneath said gate region.
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